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NTMFS4708N Power MOSFET
30 V, 19 A, Single N-Channel, SOIC-8 FL
Features
* * * * *
Fast Switching Times Low Gate Charge Low RDS(on) Low Inductance SOIC-8 Package These are Pb-Free Devices
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V(BR)DSS 30 V
RDS(on) Typ 7.3 mW @ 10 V 10.1 mW @ 4.5 V
ID Max 19 A
Applications
* Notebooks, Graphics Cards * DC-DC Converters * Synchronous Rectification
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Steady State t 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25C Steady State TA = 85C TA = 25C PD IDM TJ, TSTG IS EAS ID TA = 25C TA = 85C TA = 25C TA = 25C PD Symbol VDSS VGS ID Value 30 20 11.5 8.0 19 2.2 6.25 7.8 5.6 1.0 58 -55 to 150 6.25 245 W A C A mJ A W Unit V V A
N-Channel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
D 4708N SOIC-8 FLAT LEAD AYWW G CASE 488AA G STYLE 1 D 4708N = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
1
S S S G
D
D
tp 10 ms
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy. VDD = 25 V, VGS = 10 V, IPK = 7.0 A, L = 10 mH, RG = 25 W Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
TL
260
C
ORDERING INFORMATION
Device Package Shipping NTMFS4708NT1G SOIC-8 FL 1500 / ape & Reel T (Pb-Free) NTMFS4708NT3G SOIC-8 FL 5000 / ape & Reel T (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Value 56.5 20 124 Unit C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq).
(c) Semiconductor Components Industries, LLC, 2007
1
July, 2007 - Rev. 2
Publication Order Number: NTMFS4708N/D
NTMFS4708N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 10 1.0 50 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit
VGS = 0 V, VDS = 24 V
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = 20V
VGS(TH) VGS(TH)/TJ RDS(on)
VGS = VDS, ID = 250 mA
1.0 5.0
2.5
V mV/C
VGS = 10 V, ID = 11.5 A VGS = 4.5 V, ID = 9.5 A
7.3 10.1 23
10 14
mW
Forward Transconductance
gFS
VDS = 15 V, ID = 11.5 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VGS = 10 V, VDD = 15 V, ID = 1.0 A, RG = 3.0 W 6.7 4.3 20 16 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V; ID = 11.5 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V 970 440 115 10 1.3 2.6 4.8 1.95 W 15 nC pF
DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 6.25 A TJ = 25C TJ = 125C 0.78 0.60 32 VGS = 0 V, dIS/dt = 100 A/ms, IS = 6.25 A 15.5 16.5 24 nC ns 1.0 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR ta tb QRR
3. Pulse Test: pulse width 300 ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTMFS4708N
30 3.4 V ID, DRAIN CURRENT (A) 25 20 15 10 2.6 V 5 2.4 V 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0 0 1 2 3 2.8 V 10 V 3.8 V to 4.5 VGS = 3 V TJ = 25C 36 ID, DRAIN CURRENT (A) 30 24 18 TJ = 125C 12 6 TJ = 25C 4 5 TJ = -55C 42 VDS = 10 V
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.02 VGS = 10 V 0.015 T = 125C 0.01 T = 25C T = -55C 0.005 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.018
Figure 2. Transfer Characteristics
TJ = 25C 0.014 VGS = 4.5 V VGS = 10 V 0.006
0.01
0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A)
0.002 4 8 12 16 20 24 ID, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current and Temperature
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2 ID = 9 A 1.8 VGS = 10 V IDSS, LEAKAGE (nA) 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, TEMPERATURE (C) 100 10000 100000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V
TJ = 150C
1000
TJ = 125C
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTMFS4708N
VDS = 0 V CISS CISS CRSS COSS VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (V) 2000 1800 C, CAPACITANCE (pF) 1600 1400 1200 1000 800 600 400 200 0 10 5 VGS 0 VDS 5 CRSS 10 15 20 25 5 QT
4 Qgs Qgd
3
2
1 ID = 11.5 A TJ = 25C 0 2 4 6 8 10
0
Qg, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
100 VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns) td(on) tr
7 6 IS, SOURCE CURRENT (A) 5 4 3 2 1 0 0.2 VGS = 0 V TJ = 25C
td(off) 10 tf
1 1 10 RG, GATE RESISTANCE (W) 100
0.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V)
0.8
Figure 9. Resistive Switching Time Variation versus Gate Resistance
1000 VGS = 2.0 V SINGLE PULSE 100 TC = 25C 10 ms 10 100 ms 1 ms 1 10 ms EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 350
Figure 10. Diode Forward Voltage versus Current
ID = 7 A 300 250 200 150 100 50 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (C)
ID, DRAIN CURRENT (A)
0.1
RDS(on) LIMIT Thermal Limit Package Limit 0.1 1 10
dc
0.01 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
100
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature
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NTMFS4708N
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P (SO8 FL) CASE 488AA-01 ISSUE C
2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X
0.20 C D 2 D1
6 5
A B
0.20 C
4X
E1 2 E c
1 2 3 4
q
A1
TOP VIEW
3X
C
SEATING PLANE
0.10 C A 0.10 C SIDE VIEW
8X
e DETAIL A
DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q
MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --4.22 6.15 BSC 5.50 5.80 6.10 3.45 --4.30 1.27 BSC 0.51 0.61 0.71 0.51 ----0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --12 _
SOLDERING FOOTPRINT*
DETAIL A
3X 4X
b e/2
1 4 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN
1.270
0.750
4X
0.10 0.05
CAB c L
1.000
0.965 1.330
2X
K E2 L1
6 5
0.905 4.530 0.475
2X
0.495 M 3.200
G
D2 BOTTOM VIEW 4.560
2X
1.530
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NTMFS4708N/D

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